Please use this identifier to cite or link to this item: https://doi.org/10.1109/16.701496
DC FieldValue
dc.titleDesign of integrated current sensor for lateral IGBT power devices
dc.contributor.authorLiang, Y.C.
dc.contributor.authorSamudra, G.S.
dc.contributor.authorHor, V.S.S.
dc.date.accessioned2014-06-17T06:46:29Z
dc.date.available2014-06-17T06:46:29Z
dc.date.issued1998
dc.identifier.citationLiang, Y.C., Samudra, G.S., Hor, V.S.S. (1998). Design of integrated current sensor for lateral IGBT power devices. IEEE Transactions on Electron Devices 45 (7) : 1614-1616. ScholarBank@NUS Repository. https://doi.org/10.1109/16.701496
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/62015
dc.description.abstractThe integration of current sensor in power devices is generally an important feature when the devices undergoing design are to be used for advanced power electronic applications. This brief, for the first time, proposes a design of integrated current sensor for lateral insulatedgate bipolar transistor (LIGBT) power devices. The sensor is able to provide a constant lateral current sensing ratio over the wide variations of operating current density and gate voltage. A small variation in the sensing ratio was also achieved over normal operating temperature range of 250-450 K. ©1998 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/16.701496
dc.sourceScopus
dc.subjectDevice simulations
dc.subjectIntegrated current sensor
dc.subjectLIGBT
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1109/16.701496
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume45
dc.description.issue7
dc.description.page1614-1616
dc.description.codenIETDA
dc.identifier.isiut000074344100031
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