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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/61966
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dc.titleContact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs
dc.contributor.authorChua, Soo-Jin
dc.contributor.authorLee, Seng Hin
dc.date.accessioned2014-06-17T06:45:57Z
dc.date.available2014-06-17T06:45:57Z
dc.date.issued1994-01
dc.identifier.citationChua, Soo-Jin,Lee, Seng Hin (1994-01). Contact resistivity dependence on Ge:Ni ratio in AuNiAuGe metallization on n-GaAs. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 33 (1 A) : 66-69. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61966
dc.description.abstractIt is found that the Ni:Ge ratio in AuGeNiAu metallization on n-GaAs determines the optimally low contact resistance condition independent of the Au layer thickness. Secondary-ion mass spectroscopy showed that, at this Ni:Ge ration of 1, maximum Ge doping on the n-GaAs was obtained.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume33
dc.description.issue1 A
dc.description.page66-69
dc.description.codenJAPND
dc.identifier.isiutNOT_IN_WOS
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