Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/61933
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dc.titleCharacterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique
dc.contributor.authorLau, Wai Shing
dc.contributor.authorChong, Tow Chong
dc.contributor.authorTan, Leng Seow
dc.contributor.authorGoo, Chuen Hang
dc.contributor.authorGoh, Kian Seng
dc.date.accessioned2014-06-17T06:45:37Z
dc.date.available2014-06-17T06:45:37Z
dc.date.issued1991-11-01
dc.identifier.citationLau, Wai Shing,Chong, Tow Chong,Tan, Leng Seow,Goo, Chuen Hang,Goh, Kian Seng (1991-11-01). Characterization of traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy with an improved zero-bias thermally stimurated current technique. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 30 (11 A) : 1843-1846. ScholarBank@NUS Repository.
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61933
dc.description.abstractAn improved zero-bias thermally stimulated current (TSC) technique was successfully applied to characterize the traps in semi-insulating gallium arsenide buffer layers grown at low temperature by molecular beam epitaxy (MBE) for the reduction of backgating in gallium arsenide based integrated circuits. Conventional TSC technique is not suitable because of the strong leakage current in those buffer layers. Special precaution is needed to suppress the leakage current even when the bias is nominally zero. An electron trap with an activation energy of 0.52 eV was found in annealed buffer layers. In addition, a continuum of states, which were attributed to the interface states at the interface of arsenic precipitates and bulk gallium arsenide, was also detected.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
dc.description.volume30
dc.description.issue11 A
dc.description.page1843-1846
dc.description.codenJAPLD
dc.identifier.isiutNOT_IN_WOS
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