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Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0080-8784(08)60234-3
DC FieldValue
dc.titleChapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques
dc.contributor.authorLi, M.-f.
dc.contributor.authorYu, P.Y.
dc.date.accessioned2014-06-17T06:45:31Z
dc.date.available2014-06-17T06:45:31Z
dc.date.issued1998
dc.identifier.citationLi, M.-f., Yu, P.Y. (1998). Chapter 5.2 High-Pressure Study of DX Centers Using Capacitance Techniques. Semiconductors and Semimetals 54 (C) : 457-484. ScholarBank@NUS Repository. https://doi.org/10.1016/S0080-8784(08)60234-3
dc.identifier.issn00808784
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61925
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0080-8784(08)60234-3
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1016/S0080-8784(08)60234-3
dc.description.sourcetitleSemiconductors and Semimetals
dc.description.volume54
dc.description.issueC
dc.description.page457-484
dc.identifier.isiut000079453600006
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