Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/61919
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dc.titleCarrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy
dc.contributor.authorLi, Z.-F.
dc.contributor.authorLu, W.
dc.contributor.authorYe, H.-J.
dc.contributor.authorChen, Z.-H.
dc.contributor.authorYuan, X.-Z.
dc.contributor.authorDou, H.-F.
dc.contributor.authorShen, S.-C.
dc.contributor.authorLi, G.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-06-17T06:45:27Z
dc.date.available2014-06-17T06:45:27Z
dc.date.issued1999-09
dc.identifier.citationLi, Z.-F.,Lu, W.,Ye, H.-J.,Chen, Z.-H.,Yuan, X.-Z.,Dou, H.-F.,Shen, S.-C.,Li, G.,Chua, S.J. (1999-09). Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy. Journal of Applied Physics 86 (5) : 2691-2695. ScholarBank@NUS Repository.
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/61919
dc.description.abstractThe measurement of carrier concentration and mobility of metalorganic chemical vapor deposited GaN thin films on the sapphire substrate by an infrared reflection technique is presented. By fitting with the experimental data, all the parameters of the lattice vibration oscillators and of the plasmon are obtained. From the plasmon frequency and the damping constant, the carrier concentration and the electron mobility are derived. The concentration agrees with the Hall data very well while the mobility values are smaller than that of the Hall measurement by a factor of about 0.5. Mobility lowering are attributed to the increase of scattering for the electrons coupling with the incident photons.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume86
dc.description.issue5
dc.description.page2691-2695
dc.description.codenJAPIA
dc.identifier.isiutNOT_IN_WOS
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