Please use this identifier to cite or link to this item:
DC FieldValue
dc.titleCarrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy
dc.contributor.authorLi, Z.-F.
dc.contributor.authorLu, W.
dc.contributor.authorYe, H.-J.
dc.contributor.authorChen, Z.-H.
dc.contributor.authorYuan, X.-Z.
dc.contributor.authorDou, H.-F.
dc.contributor.authorShen, S.-C.
dc.contributor.authorLi, G.
dc.contributor.authorChua, S.J.
dc.identifier.citationLi, Z.-F.,Lu, W.,Ye, H.-J.,Chen, Z.-H.,Yuan, X.-Z.,Dou, H.-F.,Shen, S.-C.,Li, G.,Chua, S.J. (1999-09). Carrier concentration and mobility in GaN epilayers on sapphire substrate studied by infrared reflection spectroscopy. Journal of Applied Physics 86 (5) : 2691-2695. ScholarBank@NUS Repository.
dc.description.abstractThe measurement of carrier concentration and mobility of metalorganic chemical vapor deposited GaN thin films on the sapphire substrate by an infrared reflection technique is presented. By fitting with the experimental data, all the parameters of the lattice vibration oscillators and of the plasmon are obtained. From the plasmon frequency and the damping constant, the carrier concentration and the electron mobility are derived. The concentration agrees with the Hall data very well while the mobility values are smaller than that of the Hall measurement by a factor of about 0.5. Mobility lowering are attributed to the increase of scattering for the electrons coupling with the incident photons.
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleJournal of Applied Physics
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on Jan 26, 2023

Google ScholarTM


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.