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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/60872
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dc.titleNanostructured FePt thin films with high coercivity
dc.contributor.authorZhao, Z.L.
dc.contributor.authorDing, J.
dc.contributor.authorYi, J.B.
dc.contributor.authorLiu, B.H.
dc.contributor.authorChen, J.S.
dc.contributor.authorWang, J.P.
dc.contributor.authorLiu, Y.N.
dc.date.accessioned2014-06-17T06:28:19Z
dc.date.available2014-06-17T06:28:19Z
dc.date.issued2005-06
dc.identifier.citationZhao, Z.L.,Ding, J.,Yi, J.B.,Liu, B.H.,Chen, J.S.,Wang, J.P.,Liu, Y.N. (2005-06). Nanostructured FePt thin films with high coercivity. Journal of Materials Science and Technology 21 (SUPPL. 1) : 43-46. ScholarBank@NUS Repository.
dc.identifier.issn10050302
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/60872
dc.description.abstractThe influence of the presence of Ag-layers on the formation of the ordered fct-L10 phase and the consequence of magnetic properties have been studied, when thin FePt films were deposited on glass and MgO substrates. It has been found that the presence of Ag layer (particularly Ag top-layer) can promote the formation of the high-coercivity fct-L10 phase. Epitaxial growth of the FePt (001) film was observed and the crystalline size is around 10 nm with a deposition temperature of 400°C, when FePt thin film was deposited on MgO (100) single crystal substrate. With ultrathin Ag intermediate layers deposited between FePt layers, the surface morphology changed from interconnection network to isolated-island character. The perpendicular coercivity of the FePt film dramatically increased from 6.5 to 32.5 kOe.
dc.sourceScopus
dc.subjectFePt thin film
dc.subjectHigh coercivity
dc.subjectHigh-density magnetic recording
dc.subjectNanostructure
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE
dc.contributor.departmentMECHANICAL ENGINEERING
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.description.sourcetitleJournal of Materials Science and Technology
dc.description.volume21
dc.description.issueSUPPL. 1
dc.description.page43-46
dc.description.codenJSCTE
dc.identifier.isiutNOT_IN_WOS
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