Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.sna.2005.07.006
DC Field | Value | |
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dc.title | Characterization of localized laser assisted eutectic bonds | |
dc.contributor.author | Tan, A.W.Y. | |
dc.contributor.author | Tay, F.E.H. | |
dc.contributor.author | Zhang, J. | |
dc.date.accessioned | 2014-06-17T06:14:32Z | |
dc.date.available | 2014-06-17T06:14:32Z | |
dc.date.issued | 2006-01-10 | |
dc.identifier.citation | Tan, A.W.Y., Tay, F.E.H., Zhang, J. (2006-01-10). Characterization of localized laser assisted eutectic bonds. Sensors and Actuators, A: Physical 125 (2) : 573-585. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sna.2005.07.006 | |
dc.identifier.issn | 09244247 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/59697 | |
dc.description.abstract | An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints. © 2005 Elsevier B.V. All rights reserved. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.sna.2005.07.006 | |
dc.source | Scopus | |
dc.subject | Eutectic | |
dc.subject | Gold-tin | |
dc.subject | Interfacial characterization | |
dc.subject | Laser bonding | |
dc.subject | Low temperature | |
dc.subject | Single crystal quartz-to-silicon | |
dc.type | Article | |
dc.contributor.department | MECHANICAL ENGINEERING | |
dc.description.doi | 10.1016/j.sna.2005.07.006 | |
dc.description.sourcetitle | Sensors and Actuators, A: Physical | |
dc.description.volume | 125 | |
dc.description.issue | 2 | |
dc.description.page | 573-585 | |
dc.description.coden | SAAPE | |
dc.identifier.isiut | 000234535400065 | |
Appears in Collections: | Staff Publications |
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