Ultrawide band quantum dot light emitting device by postfabrication laser annealing

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2458515

Title:	Ultrawide band quantum dot light emitting device by postfabrication laser annealing
Authors:	Chia, C.K. Chua, S.J. Dong, J.R. Teo, S.L.
Issue Date:	2007
Citation:	Chia, C.K., Chua, S.J., Dong, J.R., Teo, S.L. (2007). Ultrawide band quantum dot light emitting device by postfabrication laser annealing. Applied Physics Letters 90 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2458515
Abstract:	An ultrawide band quantum dot (QD) light emitting device (LED) with bandwidth of 360 nm covering 1284-1644 nm spectral range has been demonstrated by postfabrication laser-irradiation technique. The integrated light output of the QD LED was found to increase by four times after laser annealing, attributed to the improved homogeneity of the QDs and enhanced lateral electrical and optical confinements at the active region after intermixing. Large wavelength blueshift of 315 nm has been obtained at the laser annealed region and an overall increase in bandwidth of 22% has been obtained in the QD LED after postfabrication laser annealing. © 2007 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/57744
ISSN:	00036951
DOI:	10.1063/1.2458515
Appears in Collections:	Staff Publications

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