Ultraviolet and visible electroluminescence from n-ZnOSi Ox (n,p) -Si heterostructured light-emitting diodes

Abstract

n-ZnOSi Ox n-Si and n-ZnOSi Ox p-Si heterostructured light-emitting diodes have been fabricated using metal-organic chemical-vapor deposition for a comparison study. n-ZnOSi Ox p-Si heterostructures show diodelike rectifying current-voltage characteristic with low breakdown voltage, while n-ZnOSi Ox n-Si heterostructures show symmetric nonlinear current-voltage behavior due to the double Schottky barriers at the interface. Both types of diodes emit light when a positive bias applied at Si side. Ultraviolet emission at ∼390 nm with an orange-emission centered at ∼600 nm were observed in electroluminescence spectra of n-ZnOSi Ox n-Si diodes, while whitish emission centered at ∼520 nm was observed for n-ZnOSi Ox p-Si diodes. The emission mechanisms were discussed. © 2008 American Institute of Physics.