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|Title:||Ultraviolet and visible electroluminescence from n-ZnOSi Ox (n,p) -Si heterostructured light-emitting diodes||Authors:||Tan, S.T.
|Issue Date:||2008||Citation:||Tan, S.T., Sun, X.W., Zhao, J.L., Iwan, S., Cen, Z.H., Chen, T.P., Ye, J.D., Lo, G.Q., Kwong, D.L., Teo, K.L. (2008). Ultraviolet and visible electroluminescence from n-ZnOSi Ox (n,p) -Si heterostructured light-emitting diodes. Applied Physics Letters 93 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2957465||Abstract:||n-ZnOSi Ox n-Si and n-ZnOSi Ox p-Si heterostructured light-emitting diodes have been fabricated using metal-organic chemical-vapor deposition for a comparison study. n-ZnOSi Ox p-Si heterostructures show diodelike rectifying current-voltage characteristic with low breakdown voltage, while n-ZnOSi Ox n-Si heterostructures show symmetric nonlinear current-voltage behavior due to the double Schottky barriers at the interface. Both types of diodes emit light when a positive bias applied at Si side. Ultraviolet emission at ∼390 nm with an orange-emission centered at ∼600 nm were observed in electroluminescence spectra of n-ZnOSi Ox n-Si diodes, while whitish emission centered at ∼520 nm was observed for n-ZnOSi Ox p-Si diodes. The emission mechanisms were discussed. © 2008 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/57743||ISSN:||00036951||DOI:||10.1063/1.2957465|
|Appears in Collections:||Staff Publications|
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