Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3065968
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dc.titleTunneling time of spin particle determined by the spin precession method in the Dresselhaus spin orbit semiconductor system
dc.contributor.authorWan, F.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-06-17T03:09:29Z
dc.date.available2014-06-17T03:09:29Z
dc.date.issued2009
dc.identifier.citationWan, F., Jalil, M.B.A., Tan, S.G. (2009). Tunneling time of spin particle determined by the spin precession method in the Dresselhaus spin orbit semiconductor system. Journal of Applied Physics 105 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3065968
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57726
dc.description.abstractWe determine the traversal time τ of electrons through a semiconducting barrier by relating it to the precession of its spin due to Dresselhaus spin orbital effect. The precessional angle is obtained by performing a unitary transformation of the spin axis to the effective spin orbit coupling field and determining the change in phase of the transmitted wave function. The calculated τ exhibits counterintuitive trends with respect to barrier geometry and electron energy. The proposed clocking method based on the Dresselhaus effect might have practical advantages over the applied field and simplify experimental efforts to investigate electron tunneling in semiconductor materials. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3065968
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3065968
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume105
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000266633500452
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