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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LPT.2006.888997
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dc.titleTunable GHz repetitive ps pulse InGaN laser
dc.contributor.authorChuah, C.W.
dc.contributor.authorXu, B.
dc.contributor.authorTan, T.S.
dc.contributor.authorXiang, N.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-06-17T03:09:22Z
dc.date.available2014-06-17T03:09:22Z
dc.date.issued2007-01-15
dc.identifier.citationChuah, C.W., Xu, B., Tan, T.S., Xiang, N., Chong, T.C. (2007-01-15). Tunable GHz repetitive ps pulse InGaN laser. IEEE Photonics Technology Letters 19 (2) : 70-72. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2006.888997
dc.identifier.issn10411135
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57715
dc.description.abstractUsing sinusoidal waveform, an InGaN laser unit which incorporated a 50-Ω impedance-matching unit was used to generate <70-ps pulses with a repetition frequency ranging from 800 MHz to 3.0 GHz. At 1.0 GHz, the pulses with a pulsewidth of 31 ps and a peak power of >450 mW were obtained using +27 dBm of RF power. Tuning characteristics of this gain-switching laser were studied. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LPT.2006.888997
dc.sourceScopus
dc.subjectGain-switching
dc.subjectInGaN semiconductor laser
dc.subjectPicosecond (ps) laser source
dc.subjectSemiconductor pulse laser and tunable repetition frequency
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LPT.2006.888997
dc.description.sourcetitleIEEE Photonics Technology Letters
dc.description.volume19
dc.description.issue2
dc.description.page70-72
dc.description.codenIPTLE
dc.identifier.isiut000245724000006
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