Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl102923q
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dc.titleThermal transport in suspended and supported few-layer graphene
dc.contributor.authorWang, Z.
dc.contributor.authorXie, R.
dc.contributor.authorBui, C.T.
dc.contributor.authorLiu, D.
dc.contributor.authorNi, X.
dc.contributor.authorLi, B.
dc.contributor.authorThong, J.T.L.
dc.date.accessioned2014-06-17T03:08:40Z
dc.date.available2014-06-17T03:08:40Z
dc.date.issued2011-01-12
dc.identifier.citationWang, Z., Xie, R., Bui, C.T., Liu, D., Ni, X., Li, B., Thong, J.T.L. (2011-01-12). Thermal transport in suspended and supported few-layer graphene. Nano Letters 11 (1) : 113-118. ScholarBank@NUS Repository. https://doi.org/10.1021/nl102923q
dc.identifier.issn15306984
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57654
dc.description.abstractWe report thermal conductivity (κ) measurements from 77 to 350 K on both suspended and supported few-layer graphene using a thermal-bridge configuration. The room temperature value of κ is comparable to that of bulk graphite for the largest flake, but reduces significantly for smaller flakes. The presence of a substrate lowers the value of k, but the effect diminishes for the thermal transport in the top layers away from the substrate. For the suspended sample, the temperature dependence of k follows a power law with an exponent of 1.4 ± 0.1, suggesting that the flexural phonon modes contribute significantly to the thermal transport of the suspended graphene. The measured values of ± are generally lower than those from theoretical studies. We attribute this deviation to the phonon-boundary scattering at the graphene-contact interfaces, which is shown to significantly reduce the apparent measured thermal conductance of graphene. © 2011 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nl102923q
dc.sourceScopus
dc.subjectGraphene
dc.subjectPhonon transport
dc.subjectThermal boundary resistance
dc.subjectThermal conductivity
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1021/nl102923q
dc.description.sourcetitleNano Letters
dc.description.volume11
dc.description.issue1
dc.description.page113-118
dc.identifier.isiut000286029400019
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