Please use this identifier to cite or link to this item: https://doi.org/10.1109/TEMC.2008.922792
DC FieldValue
dc.titleThermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI)
dc.contributor.authorXu, J.
dc.contributor.authorYin, W.-Y.
dc.contributor.authorMao, J.-F.
dc.contributor.authorLi, L.-W.J.
dc.date.accessioned2014-06-17T03:08:39Z
dc.date.available2014-06-17T03:08:39Z
dc.date.issued2008-05
dc.identifier.citationXu, J., Yin, W.-Y., Mao, J.-F., Li, L.-W.J. (2008-05). Thermal transient response of GaAs FETs under intentional electromagnetic interference (IEMI). IEEE Transactions on Electromagnetic Compatibility 50 (2) : 340-346. ScholarBank@NUS Repository. https://doi.org/10.1109/TEMC.2008.922792
dc.identifier.issn00189375
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57653
dc.description.abstractTransient thermal responses of GaAs field-effect transistors (FETs) in the presence of an electromagnetic pulse (EMP) are investigated in this paper. The numerical methodology employed is an efficient nonlinear finite-element method (FEM) that combines the element-by-element FEM and the preconditioned conjugate gradient technique. Parametric studies are carried out to show different pulse parameters on the transient thermal responses as well as maximum channel temperatures of some typical GaAs FETs, with silicon FETs also taken into account for comparison. It is numerically proven that the thermal impact caused by medium EMP will be the most serious compared with fast EMP or ultra-wideband pulse, and the captured maximum channel temperature is proportional to the input power density, approximately of the EMP injected. This research can serve as a base for taking further protection measures to prevent on-chip device from breakdown by the attack of an EMP. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TEMC.2008.922792
dc.sourceScopus
dc.subjectBreakdown
dc.subjectElectromagnetic pulses (EMPs)
dc.subjectGaAs field-effect transistors (FETs)
dc.subjectIntentional electromagnetic interference (IEMI)
dc.subjectMaximum channel temperature
dc.subjectNonlinear finite-element method (FEM)
dc.subjectSilicon FET
dc.subjectTransient thermal response
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TEMC.2008.922792
dc.description.sourcetitleIEEE Transactions on Electromagnetic Compatibility
dc.description.volume50
dc.description.issue2
dc.description.page340-346
dc.description.codenIEMCA
dc.identifier.isiut000208095400015
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