1. ScholarBank@NUS
  2. 1. Staff
  3. Staff Publications
Please use this identifier to cite or link to this item: https://doi.org/10.1049/el.2010.1064
DC FieldValue
dc.titleTemperature independent current biasing employing TFET
dc.contributor.authorGuo, P.F.
dc.contributor.authorYang, Y.
dc.contributor.authorSamudra, G.
dc.contributor.authorHeng, C.H.
dc.contributor.authorYeo, Y.C.
dc.date.accessioned2014-06-17T03:08:05Z
dc.date.available2014-06-17T03:08:05Z
dc.date.issued2010-05-27
dc.identifier.citationGuo, P.F., Yang, Y., Samudra, G., Heng, C.H., Yeo, Y.C. (2010-05-27). Temperature independent current biasing employing TFET. Electronics Letters 46 (11) : 786-787. ScholarBank@NUS Repository. https://doi.org/10.1049/el.2010.1064
dc.identifier.issn00135194
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57604
dc.description.abstractA recent study to a tunnelling field-effect transistor (TFET) reveals interesting temperature behaviour. It is found that the TFET drain current temperature coefficient varies with the applied drain and gate voltage. Explored is a circuit which exploits this unique behaviour of the TFET to achieve temperature independent current biasing. © 2010 The Institution of Engineering and Technology.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1049/el.2010.1064
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1049/el.2010.1064
dc.description.sourcetitleElectronics Letters
dc.description.volume46
dc.description.issue11
dc.description.page786-787
dc.description.codenELLEA
dc.identifier.isiut000279091200035
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.