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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2013.2262918
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dc.titleTantalum-nitride antifuse electromechanical OTP for embedded memory applications
dc.contributor.authorSingh, P.
dc.contributor.authorLi, C.G.
dc.contributor.authorPitchappa, P.
dc.contributor.authorLee, C.
dc.date.accessioned2014-06-17T03:07:57Z
dc.date.available2014-06-17T03:07:57Z
dc.date.issued2013
dc.identifier.citationSingh, P., Li, C.G., Pitchappa, P., Lee, C. (2013). Tantalum-nitride antifuse electromechanical OTP for embedded memory applications. IEEE Electron Device Letters 34 (8) : 987-989. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2013.2262918
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57592
dc.description.abstractEmbedded nonvolatile memory (NVM) integrated in the back-end of line processes are of high interest, particularly for rugged environments (high temperature/radiation or vibration). This letter demonstrates the use of tantalum nitride microbeams as antifuse one-time programmable (OTP) NVM. It needs a single mask process and can be integrated above an integrated circuit. Typical fusing current is 1 mA, operating voltage is 4 V, and the measured contact resistance is <2kΩ. A hybrid one-transistor/one microbeam/bit memory array is proposed for back-end compatible and low-cost OTP NVM integration. © 1980-2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2013.2262918
dc.sourceScopus
dc.subjectEmbedded memory
dc.subjectnanoelectro-mechanical systems (NEMS)
dc.subjectnonvolatile memory (NVM)
dc.subjectone-time programmable (OTP)
dc.subjecttantalum nitride (TaN)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2013.2262918
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume34
dc.description.issue8
dc.description.page987-989
dc.description.codenEDLED
dc.identifier.isiut000323911800018
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