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Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCSII.2009.2035274
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dc.titleSPICE behavioral model of the tunneling field-effect transistor for circuit simulation
dc.contributor.authorHong, Y.
dc.contributor.authorYang, Y.
dc.contributor.authorYang, L.
dc.contributor.authorSamudra, G.
dc.contributor.authorHeng, C.-H.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-06-17T03:06:35Z
dc.date.available2014-06-17T03:06:35Z
dc.date.issued2009-12
dc.identifier.citationHong, Y., Yang, Y., Yang, L., Samudra, G., Heng, C.-H., Yeo, Y.-C. (2009-12). SPICE behavioral model of the tunneling field-effect transistor for circuit simulation. IEEE Transactions on Circuits and Systems II: Express Briefs 56 (12) : 946-950. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSII.2009.2035274
dc.identifier.issn15497747
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57473
dc.description.abstractThe tunneling field-effect transistor (TFET) is an alternative device for deep-submicrometer CMOS with very good short channel and leakage characteristics. In this brief, a SPICE behavioral model that well captures the I-V characteristics and the parasitic capacitance of the n-channel TFET is proposed to facilitate efficient circuit design and simulation. The validity of the model is verified with technology computer-aided design (TCAD) simulation. The accuracy is within 10% and is of an order of magnitude faster than the TCAD. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TCSII.2009.2035274
dc.sourceScopus
dc.subjectBehavioral modeling
dc.subjectInverter
dc.subjectSPICE simulation
dc.subjectTunneling field-effect transistor (TFET)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TCSII.2009.2035274
dc.description.sourcetitleIEEE Transactions on Circuits and Systems II: Express Briefs
dc.description.volume56
dc.description.issue12
dc.description.page946-950
dc.identifier.isiut000272845600014
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