Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1448882
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dc.titlePulsed-laser assisted nanopatterning of metallic layers combined with atomic force microscopy
dc.contributor.authorHuang, S.M.
dc.contributor.authorHong, M.H.
dc.contributor.authorLu, Y.F.
dc.contributor.authorLukỳanchuk, B.S.
dc.contributor.authorSong, W.D.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-06-17T03:02:57Z
dc.date.available2014-06-17T03:02:57Z
dc.date.issued2002-02-15
dc.identifier.citationHuang, S.M., Hong, M.H., Lu, Y.F., Lukỳanchuk, B.S., Song, W.D., Chong, T.C. (2002-02-15). Pulsed-laser assisted nanopatterning of metallic layers combined with atomic force microscopy. Journal of Applied Physics 91 (5) : 3268-3274. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1448882
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57159
dc.description.abstractPulsed-laser assisted nanopatterning of metallic layers on silicon substrates under an atomic force microscope (AFM) tip has been investigated. A 532 nm Nd:YAG pulsed laser with a pulse duration of 7 ns was used. Boron doped silicon tips were used in contact mode. This technique enables processing of structures with a lateral resolution down to 10 nm on the copper layers. Nanopatterns such as pit array and multilines with lateral dimensions between 10 and 60 nm and depths between 1.5 and 7.0 nm have been created. The experimental results and mechanism of the nanostructure formation are discussed. The created features were characterized by AFM, scanning electron microscope and Auger electron spectroscopy. The apparent depth of the created pit has been studied as a function of laser intensity or laser pulse numbers. Dependence of nanoprocessing on the geometry parameters of the tip and on the optical and thermal properties of the processed sample has also been investigated. Thermal expansion of the tip, the field enhancement factor underneath the tip, and the sample surface heating were estimated. It is proposed that field-enhancement mechanism is the dominant reason for this nanoprocessing. © 2002 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1448882
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1448882
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume91
dc.description.issue5
dc.description.page3268-3274
dc.description.codenJAPIA
dc.identifier.isiut000174182400109
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