Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0038-1101(02)00322-2
DC FieldValue
dc.titleProperties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing
dc.contributor.authorLi, B.
dc.contributor.authorChua, S.-J.
dc.contributor.authorNikolai, Y.
dc.contributor.authorWang, L.
dc.contributor.authorSia, E.-K.
dc.date.accessioned2014-06-17T03:02:44Z
dc.date.available2014-06-17T03:02:44Z
dc.date.issued2003-04
dc.identifier.citationLi, B., Chua, S.-J., Nikolai, Y., Wang, L., Sia, E.-K. (2003-04). Properties of Schottky contact of titanium on low doped p-type SiGeC alloy by rapid thermal annealing. Solid-State Electronics 47 (4) : 601-605. ScholarBank@NUS Repository. https://doi.org/10.1016/S0038-1101(02)00322-2
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57139
dc.description.abstractElectrical properties of Schottky contact of titanium on low boron doped SiGeC have been investigated as a function of annealing temperature. Annealing has been performed at a temperature range of 400-600 °C for 10 min. The Schottky barrier heights were deduced from current-voltage characteristics. Both rapid thermal annealing and bias voltage will lead to a decrease of the Schottky barrier height for Ti/p-SiGeC contact. The decrease of Schottky barrier heights caused by the increase of annealing temperatures is about 3.5-5.6 meV per 100 °C between 400 and 600 °C and by the increase of bias voltage is less than 1 meV/V. X-ray diffraction and secondary ion mass spectroscopy measurements were performed and showed that, after annealing at 600 °C for 10 min, the SiGeC peak has shifted a little to the right compared with the Si substrate peak and a slight strain relaxation was occurred in the SiGeC epilayer. © 2003 Published by Elsevier Science Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0038-1101(02)00322-2
dc.sourceScopus
dc.subjectAnnealing
dc.subjectMetal-semiconductor contact
dc.subjectSchottky barrier height
dc.subjectSiGeC alloy
dc.subjectTitanium
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S0038-1101(02)00322-2
dc.description.sourcetitleSolid-State Electronics
dc.description.volume47
dc.description.issue4
dc.description.page601-605
dc.description.codenSSELA
dc.identifier.isiut000181539300002
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.