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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2165131
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dc.titlePlanar Hall effect in orthogonal submicrometer Co wires
dc.contributor.authorHuang, Y.S.
dc.contributor.authorWang, C.C.
dc.contributor.authorAdeyeye, A.O.
dc.contributor.authorTripathy, D.
dc.date.accessioned2014-06-17T03:01:54Z
dc.date.available2014-06-17T03:01:54Z
dc.date.issued2006
dc.identifier.citationHuang, Y.S., Wang, C.C., Adeyeye, A.O., Tripathy, D. (2006). Planar Hall effect in orthogonal submicrometer Co wires. Journal of Applied Physics 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2165131
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/57070
dc.description.abstractWe report on the planar Hall effect (PHE) at the junction of two orthogonal 200-nm-wide Co wires. Both the experimental and simulated PHE curves reveal that the magnetization switching at the junction is strongly associated with the reversal processes of the individual wire. As the orientation of applied field is varied with respect to the easy axes of the wires, the switching field and the direction of the spin rotation at the junction can be well controlled. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2165131
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2165131
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume99
dc.description.issue8
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000237404200176
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