Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/56990
DC Field | Value | |
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dc.title | Parameters and mechanisms governing image contrast in scanning electron microscopy of single-walled carbon nanotubes | |
dc.contributor.author | Wong, W.K. | |
dc.contributor.author | Nojeh, A. | |
dc.contributor.author | Pease, R.F.W. | |
dc.date.accessioned | 2014-06-17T03:01:00Z | |
dc.date.available | 2014-06-17T03:01:00Z | |
dc.date.issued | 2006-07 | |
dc.identifier.citation | Wong, W.K.,Nojeh, A.,Pease, R.F.W. (2006-07). Parameters and mechanisms governing image contrast in scanning electron microscopy of single-walled carbon nanotubes. Scanning 28 (4) : 219-227. ScholarBank@NUS Repository. | |
dc.identifier.issn | 01610457 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/56990 | |
dc.description.abstract | Image formation of single-walled carbon nanotubes (SWNTs) in the scanning electron microscope (SEM) is peculiarly sensitive to primary electron landing energy, imaging history, sample/substrate geometry, electrical conductivity, sample contamination, and substrate charging. This sensitivity is probably due to the extremely small interaction volume of the SWNTs' monolayered, nanoscale structures with the electron beam. Traditional electron beam/bulk specimen interaction models appear unable to explain the contrast behavior when directly applied to SWNTs. We present one systematic case study of SWNT SEM imaging with special attention to the above parameters and propose some physical explanations for the effect of each. We also demonstrate that it is possible to employ voltage biasing to counteract this extrinsic behavior, gain better control of the image contrast, and facilitate the interpretation of SWNT images in the SEM. © FAMS, Inc. | |
dc.source | Scopus | |
dc.subject | Carbon nanotubes | |
dc.subject | Electron beam-induced conductivity | |
dc.subject | Electron beam-specimen interaction | |
dc.subject | Scanning electron microscopy | |
dc.subject | Secondary electron emission | |
dc.subject | Voltage contrast | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Scanning | |
dc.description.volume | 28 | |
dc.description.issue | 4 | |
dc.description.page | 219-227 | |
dc.description.coden | SCNND | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
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