Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2795341
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dc.titleNanopillar ferromagnetic nanostructure as highly efficient spin injector into semiconductor
dc.contributor.authorBala Kumar, S.
dc.contributor.authorTan, S.G.
dc.contributor.authorJalil, M.B.A.
dc.contributor.authorGuo, J.
dc.date.accessioned2014-06-17T02:58:20Z
dc.date.available2014-06-17T02:58:20Z
dc.date.issued2007
dc.identifier.citationBala Kumar, S., Tan, S.G., Jalil, M.B.A., Guo, J. (2007). Nanopillar ferromagnetic nanostructure as highly efficient spin injector into semiconductor. Applied Physics Letters 91 (14) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2795341
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56762
dc.description.abstractWe report the prediction of a high spin injection ratio γ into a semiconductor (SC) contact, by using a ferromagnetic (FM), small-sized, and cylindrical nanopillar as the spin injector (SI). The increase in spin scattering within the FM nanopillar injects spin current into the SC, effectually mitigates the blockage of SI due to conductance mismatch. To minimize the spreading resistance (SR) which arises due to areal discontinuity at FM-SC interface, a thin low resistance metal is inserted at the interface such that SR is contained within it. With the insertion, we obtained γ of as high as 40%, compared to just 3% without insertion, and an even lower value of 0.5% without the nanopillar patterning. © 2007 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2795341
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.description.doi10.1063/1.2795341
dc.description.sourcetitleApplied Physics Letters
dc.description.volume91
dc.description.issue14
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000249974100056
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