Nanoelectronic logic device based on the manipulation of magnetic and electric barriers

Abstract

We propose a programmable logic device that utilizes magnetoelectric (ME) barriers to realize Boolean functions. We use a high-electron-mobility- transistor in which electron transport in the two-dimensional-electron-gas channel is modulated by applied ME potential barriers via a combination of periodic ferromagnetic and nonmagnetic gates. Electron transmission through the device is calculated based on the minimal-coupling Hamiltonian. The device can be programmed to realize multiple three-input, logic functions, such as OR, AND, NAND, and NOR. The binary logic output of 1/0 corresponds, respectively, to the high/low transmission of electrons through the externally applied barriers. The calculation results show clear binary outputs, with a high (low) state having a transmission probability of T>80% (T<20%). We also studied the effect of varying gate lengths on T. © 2008 American Institute of Physics.