Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2168434
DC FieldValue
dc.titleMolecular-beam epitaxy growth and magnetic properties of BeTe with Cr doping
dc.contributor.authorViloane, K.
dc.contributor.authorSreenivasan, M.G.
dc.contributor.authorTeo, K.L.
dc.contributor.authorLiew, T.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-06-17T02:57:29Z
dc.date.available2014-06-17T02:57:29Z
dc.date.issued2006
dc.identifier.citationViloane, K., Sreenivasan, M.G., Teo, K.L., Liew, T., Chong, T.C. (2006). Molecular-beam epitaxy growth and magnetic properties of BeTe with Cr doping. Journal of Applied Physics 99 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168434
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56689
dc.description.abstractWe report the growth and magnetic properties of BeTe with Cr doping grown on GaAs(001) substrate at Te-rich condition by solid-source molecular-beam epitaxy. Ferromagnetisms were observed for films with high Cr concentration, x. The Curie temperatures TC for x=0.13 and x=0.17 are 175±5 K, while the TC for x=0.27 is 250±5 K. Structural properties were studied by in situ reflection high-energy electron diffraction, atomic force microscopy, and x-ray diffraction. Be1-x Mnx Te and Cr1-δ Te films were also grown and compared with the Be(Cr)Te films. We show that the ferromagnetic ordering of Be(Cr)Te films can be attributed to precipitations of NiAs Cr1-δ Te. © 2006 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2168434
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2168434
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume99
dc.description.issue8
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000237404200219
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