Modeling of charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide

Abstract

Charge quantization and wave function penetration effects in a metal-oxide-semiconductor system with ultrathin gate oxide were investigated. The capacitance-voltage (C-V) results were compared with those obtained from other quantum mechanical (QM) simulators. Results showed that the wave function penetration has a non-negligible effect on the gate capacitance and resulting C-V curves when the oxide thickness decreases to 1 nm and below.