Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2719200
DC FieldValue
dc.titleManufacturing method for the fabrication of sub- 50 nm current- perpendicular-to-plane spin valve sensors
dc.contributor.authorHan, G.C.
dc.contributor.authorLi, K.B.
dc.contributor.authorZheng, Y.K.
dc.contributor.authorQiu, J.J.
dc.contributor.authorLuo, P.
dc.contributor.authorAn, L.H.
dc.contributor.authorGuo, Z.B.
dc.contributor.authorLiu, Z.Y.
dc.contributor.authorWu, Y.H.
dc.date.accessioned2014-06-17T02:56:13Z
dc.date.available2014-06-17T02:56:13Z
dc.date.issued2007
dc.identifier.citationHan, G.C., Li, K.B., Zheng, Y.K., Qiu, J.J., Luo, P., An, L.H., Guo, Z.B., Liu, Z.Y., Wu, Y.H. (2007). Manufacturing method for the fabrication of sub- 50 nm current- perpendicular-to-plane spin valve sensors. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 25 (3) : 725-729. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2719200
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56581
dc.description.abstractA manufacturing method is developed for the fabrication of sub- 50 nm current-perpendicular-to-plane (CPP) spin valve sensors. A feature size reduction process is used to reduce the feature size from above 100 nm, which is determined by lithography process, to sub- 50 nm. The approach is to use the isotropic wet etch of a hard mask to reduce its transverse dimension and transfer the reduced dimension to CPP sensors by a subsequent etch process. In this approach, the sensor size is controlled by the wet etch, which can, in principle, be reduced to several nanometers. For CPP sensor fabrication, resist flattening and etch back processes are developed to avoid the alignment issues for the opening of sensor contacts. Using this approach, CPP sensors with sub- 50 nm track width have been fabricated. Magnetoresistance measurement shows that the sensor has a reasonable performance. © 2007 American Vacuum Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.2719200
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.2719200
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume25
dc.description.issue3
dc.description.page725-729
dc.description.codenJVTBD
dc.identifier.isiut000247551300010
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.