Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition

Abstract

The effects of laser annealing on the structures and properties of silicon nanocrystal films fabricated by pulsed laser deposition in inert argon gas were studied. The properties of the as-deposited large particles with size ranging from ∼100 nm to several μm on a uniform background films were analyzed. It was found that the strong photoluminescence (PL) was from the background film instead of the crystalline droplets. The consistency of the PL and crystal size from the background film was also found to support the quantum confinement effect theory. Nanoparticles with sizes ranging from 10-50 nm were found to be formed in the as deposited films after KrF excimer laser annealing.