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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1592618
DC FieldValue
dc.titleInvestigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method
dc.contributor.authorYiang, K.Y.
dc.contributor.authorYoo, W.J.
dc.contributor.authorGuo, Q.
dc.contributor.authorKrishnamoorthy, A.
dc.date.accessioned2014-06-17T02:54:08Z
dc.date.available2014-06-17T02:54:08Z
dc.date.issued2003-07-21
dc.identifier.citationYiang, K.Y., Yoo, W.J., Guo, Q., Krishnamoorthy, A. (2003-07-21). Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method. Applied Physics Letters 83 (3) : 524-526. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1592618
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56398
dc.description.abstractElectron conduction in carbon-doped silicon oxide was discussed. Voltage ramp method was used in an electric field range of 0 MV/cm to the breakdown field at 300 K. Results showed the presence and role of electron traps in the conduction of SiOC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1592618
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1592618
dc.description.sourcetitleApplied Physics Letters
dc.description.volume83
dc.description.issue3
dc.description.page524-526
dc.description.codenAPPLA
dc.identifier.isiut000184186700040
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