Please use this identifier to cite or link to this item:
https://doi.org/10.1063/1.2822422
DC Field | Value | |
---|---|---|
dc.title | Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate | |
dc.contributor.author | Dalapati, G.K. | |
dc.contributor.author | Sridhara, A. | |
dc.contributor.author | Wong, A.S.W. | |
dc.contributor.author | Chia, C.K. | |
dc.contributor.author | Lee, S.J. | |
dc.contributor.author | Chi, D. | |
dc.date.accessioned | 2014-06-17T02:53:49Z | |
dc.date.available | 2014-06-17T02:53:49Z | |
dc.date.issued | 2007 | |
dc.identifier.citation | Dalapati, G.K., Sridhara, A., Wong, A.S.W., Chia, C.K., Lee, S.J., Chi, D. (2007). Interfacial characteristics and band alignments for Zr O2 gate dielectric on Si passivated p-GaAs substrate. Applied Physics Letters 91 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2822422 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/56370 | |
dc.description.abstract | The interfacial characteristics and band alignments of high- k Zr O2 on p-GaAs have been investigated by using x-ray photoelectron spectroscopy and electrical measurements. It has been demonstrated that the presence of Si interfacial passivation layer (IPL) improves GaAs metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, and hysteresis. It is also found that Si IPL can reduce interfacial GaAs-oxide formation and increases effective valence-band offset at Zr O2 p-GaAs interface. The effective valence-band offsets of Zr O2 p-GaAs and Zr O2 Sip-GaAs interfaces are determined to be 2.7 and 2.84 eV, while the effective conduction-band offsets are found to be 1.67 and 1.53 eV, respectively. © 2007 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2822422 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.2822422 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 91 | |
dc.description.issue | 24 | |
dc.description.page | - | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000251678700033 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.