Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.2198849
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dc.titleInterface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack
dc.contributor.authorJoo, M.S.
dc.contributor.authorPark, C.S.
dc.contributor.authorCho, B.J.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-06-17T02:53:47Z
dc.date.available2014-06-17T02:53:47Z
dc.date.issued2006-05
dc.identifier.citationJoo, M.S., Park, C.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2006-05). Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 24 (3) : 1341-1343. ScholarBank@NUS Repository. https://doi.org/10.1116/1.2198849
dc.identifier.issn10711023
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56367
dc.description.abstractMetal-induced gap states (MIGS) theory is applied to fully silicided (FUSI) gate for the investigation of Fermi-level pinning at the interface of FUSI gate and high- K dielectrics. Using the combination of semiempirical approach and MIGS theory, it has been found that FUSI gate has effectively M Si2 configuration at the interface with gate dielectrics. The vacuum work function values of several FUSI gates have been obtained through the analysis, and it has also been found that the Fermi-level pinning behavior of FUSI gate on high- K dielectric follows the MIGS theory well. FUSI gate on high- K dielectric shows much weaker Fermi-level pinning compared with polysilicon gate on high K dielectric, which is another attractive advantage of FUSI gate process. © 2006 American Vacuum Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.2198849
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.2198849
dc.description.sourcetitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
dc.description.volume24
dc.description.issue3
dc.description.page1341-1343
dc.description.codenJVTBD
dc.identifier.isiut000238790000045
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