Influence of N incorporation on in content in GaInNAs/GaNAs quantum wells grown by plasma-assisted molecular beam epitaxy

Abstract

The authors investigated the synthesis of GaIn(N)As/Ga(N)As multiple quantum wells by molecular beam epitaxy. Introducing N into the GaInAs appears to suppress the incorporation of In as indicated by reflective high-energy electron diffraction (RHEED). This effect is mainly due to the N-induced enhancement of In surface segregation at the growth front and is evidenced by the increasing damping rate of RHEED oscillations with N incorporation. The N-induced enhancement of In segregation in the GalnNAs quantum wells is confirmed by secondary-ion-mass spectroscopy and high-resolution x-ray diffractions, and its origin is discussed. © 2006 American Institute of Physics.