Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3581042
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dc.titleHall effect-induced acceleration of electromigration failures in spin valve multilayers under magnetic field
dc.contributor.authorJiang, J.
dc.contributor.authorZeng, D.G.
dc.contributor.authorChung, K.-W.
dc.contributor.authorKim, J.
dc.contributor.authorBae, S.
dc.date.accessioned2014-06-17T02:51:32Z
dc.date.available2014-06-17T02:51:32Z
dc.date.issued2011-04-18
dc.identifier.citationJiang, J., Zeng, D.G., Chung, K.-W., Kim, J., Bae, S. (2011-04-18). Hall effect-induced acceleration of electromigration failures in spin valve multilayers under magnetic field. Applied Physics Letters 98 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3581042
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/56172
dc.description.abstractIt was observed that electromigration (EM)-induced failures in spin valve multilayers were severely accelerated by an externally applied magnetic field. The theoretical and experimental analysis results confirmed that Hall effect-induced Lorentz force applied to the perpendicular-to-the-film-plane direction is primarily responsible for the severe acceleration of the EM failures due to its dominant contribution to abruptly increasing local temperature and current density. The proposed failure model and the theoretical calculations were demonstrated to agree well with the experimental observations. © 2011 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3581042
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3581042
dc.description.sourcetitleApplied Physics Letters
dc.description.volume98
dc.description.issue16
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000289842700047
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