Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a "nucleation-augmented" method

Abstract

Enhanced photoluminescence (PL) of InAs self-assembled quantum dots (SAQD) structures grown by molecular beam epitaxy (MBE) were investigated. It was shown that the initial 1.8 monolayers (ML) nucleation layer grown at a faster growth rate helped to increase the dot density, resulting in a higher PL intensity. The PL emission wavelength of the InAs QDs redshifted with the reduction in the effective growth rate of the InAs augmented layer. The changes in characteristics were found to be due to improved optical quality and greater dot density.