Electrical and proximity-magnetic effects induced quantum Goos-Hänchen shift on the surface of topological insulator

Abstract

We use scattering matrix method to theoretically demonstrate that the quantum Goos-Hänchen shift of the surface on three-dimensional topological insulator coated by ferromagnetic strips is sensitive to the magnitude of ferromagnetic magnetization. The dependence of quantum Goos-Hänchen shift on magnetization and gate bias is investigated by performing station phase approach. It is found that quantum Goos-Hänchen shift is positive and large under the magnetic barrier but may be positive as well as negative values under the gate bias. Furthermore, the position of quantum Goos-Hänchen peak can also be modulated by the combination of gate bias and proximity magnetic effects. Our results indicate that topological insulators are another candidates to support quantum Goos-Hänchen shift. © 2013 Elsevier B.V.