Electric passivation of interface traps at drain junction space charge region in p-MOS transistors

Abstract

Hot carrier (HC) induced interface trap passivation and migration at the drain junction space charge (JSC) region during FN stresses in p-MOS transistors (p-MOST's) was observed for the first time. This is explained by the processes that hydrogen atoms are released from the basewell channel (BC) region, transport to the JSC region and recombine with the dangling silicon bonds. A three-cell difference model of the hydrogen release and absorption was used to interpret this phenomenon. The effect is important in predicting the hot carrier degradation and lifetime projection of MOS transistors. © 2001 Elsevier Science Ltd. All rights reserved.