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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1566469
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dc.titleEffects of tensile strain in barrier on optical gain spectra of GalnNAs/GaASn quantum wells
dc.contributor.authorFan, W.J.
dc.contributor.authorNg, S.T.
dc.contributor.authorYoon, S.F.
dc.contributor.authorLi, M.F.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-06-17T02:47:03Z
dc.date.available2014-06-17T02:47:03Z
dc.date.issued2003-05-01
dc.identifier.citationFan, W.J., Ng, S.T., Yoon, S.F., Li, M.F., Chong, T.C. (2003-05-01). Effects of tensile strain in barrier on optical gain spectra of GalnNAs/GaASn quantum wells. Journal of Applied Physics 93 (9) : 5836-5838. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1566469
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55782
dc.description.abstractThe effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells were discussed. It was found that the transition energy decreased with when increasing the N composition in the barrier. The analysis showed that the transparency carrier density increased with the nitrogen composition in the GaAsN barrier and the transparency radiative current density decreased with more nitrogen being added into the barrier.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1566469
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1566469
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue9
dc.description.page5836-5838
dc.description.codenJAPIA
dc.identifier.isiut000182296700128
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