Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge (001) Schottky contacts

Abstract

Schottky contacts of Pt germanide films formed on n-Ge (001) through solid-state reaction between Pt and Ge(001) via rapid thermal annealing were investigated. Almost identical effective barrier heights of ∼0.619-0.626 eV were obtained for PtGen-Ge (001), Pt2 Ge3 n-Ge (001), and Pt Ge2 n-Ge (001) Schottky contacts from current-voltage measurements. From the effective barrier height values, actual barrier heights of ∼0.653-0.663 eV were determined by taking into account the image force induced barrier lowering in the presence of strong inversion layers at the interfaces. The actual barrier height values obtained were further validated by the good agreement between experimental and simulation results for capacitance-voltage characterization. © 2006 American Institute of Physics.