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https://doi.org/10.1063/1.1977196
DC Field | Value | |
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dc.title | Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide | |
dc.contributor.author | Jin, L.J. | |
dc.contributor.author | Pey, K.L. | |
dc.contributor.author | Choi, W.K. | |
dc.contributor.author | Fitzgerald, E.A. | |
dc.contributor.author | Antoniadis, D.A. | |
dc.contributor.author | Pitera, A.J. | |
dc.contributor.author | Lee, M.L. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Rahman, Md.A. | |
dc.contributor.author | Osipowicz, T. | |
dc.contributor.author | Tung, C.H. | |
dc.date.accessioned | 2014-06-17T02:46:48Z | |
dc.date.available | 2014-06-17T02:46:48Z | |
dc.date.issued | 2005-08-01 | |
dc.identifier.citation | Jin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Rahman, Md.A., Osipowicz, T., Tung, C.H. (2005-08-01). Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide. Journal of Applied Physics 98 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1977196 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/55760 | |
dc.description.abstract | The effect of Pt alloy in Ni (Pt∼5 and 10 at. %) on the agglomeration and Ge out diffusion in nickel germanosilicide formed on Si0.75 Ge0.25 (100) has been studied. A remarkable improvement in the agglomeration behavior with increasing Pt atomic percentage is observed by sheet resistance measurements while still maintaining Ni(Pt) monogermanosilicide phase between 400 and 800 °C. Ge out diffusion from the monogermanosilicide grains has been suppressed up to a temperature of 700 °C with the addition of Pt, evident by x-ray diffraction and micro-Raman spectroscopy. In addition, that improvement of surface morphology and suppression of Ge out diffusion with increasing Pt atomic percent is also confirmed by Rutherford backscattering and cross-sectional transmission electron microscopy. The improved morphology and agglomeration are explained by a grain-boundary model which includes kinetic effects. The suppression of Ge out diffusion from the germanosilicide grains is attributed to reduced atomic diffusion and the presence of stronger Pt-Si and Pt-Ge bonds due to the addition of Pt. © 2005 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1977196 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | PHYSICS | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.1977196 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 98 | |
dc.description.issue | 3 | |
dc.description.page | - | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000231246100028 | |
Appears in Collections: | Staff Publications |
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