Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1977196
DC FieldValue
dc.titleEffect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide
dc.contributor.authorJin, L.J.
dc.contributor.authorPey, K.L.
dc.contributor.authorChoi, W.K.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorAntoniadis, D.A.
dc.contributor.authorPitera, A.J.
dc.contributor.authorLee, M.L.
dc.contributor.authorChi, D.Z.
dc.contributor.authorRahman, Md.A.
dc.contributor.authorOsipowicz, T.
dc.contributor.authorTung, C.H.
dc.date.accessioned2014-06-17T02:46:48Z
dc.date.available2014-06-17T02:46:48Z
dc.date.issued2005-08-01
dc.identifier.citationJin, L.J., Pey, K.L., Choi, W.K., Fitzgerald, E.A., Antoniadis, D.A., Pitera, A.J., Lee, M.L., Chi, D.Z., Rahman, Md.A., Osipowicz, T., Tung, C.H. (2005-08-01). Effect of Pt on agglomeration and Ge out diffusion in Ni(Pt) germanosilicide. Journal of Applied Physics 98 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1977196
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55760
dc.description.abstractThe effect of Pt alloy in Ni (Pt∼5 and 10 at. %) on the agglomeration and Ge out diffusion in nickel germanosilicide formed on Si0.75 Ge0.25 (100) has been studied. A remarkable improvement in the agglomeration behavior with increasing Pt atomic percentage is observed by sheet resistance measurements while still maintaining Ni(Pt) monogermanosilicide phase between 400 and 800 °C. Ge out diffusion from the monogermanosilicide grains has been suppressed up to a temperature of 700 °C with the addition of Pt, evident by x-ray diffraction and micro-Raman spectroscopy. In addition, that improvement of surface morphology and suppression of Ge out diffusion with increasing Pt atomic percent is also confirmed by Rutherford backscattering and cross-sectional transmission electron microscopy. The improved morphology and agglomeration are explained by a grain-boundary model which includes kinetic effects. The suppression of Ge out diffusion from the germanosilicide grains is attributed to reduced atomic diffusion and the presence of stronger Pt-Si and Pt-Ge bonds due to the addition of Pt. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1977196
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1977196
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume98
dc.description.issue3
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000231246100028
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