Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1597990
DC FieldValue
dc.titleEffect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions
dc.contributor.authorLiu, W.
dc.contributor.authorChua, S.J.
dc.contributor.authorZhang, X.H.
dc.contributor.authorZhang, J.
dc.date.accessioned2014-06-17T02:46:39Z
dc.date.available2014-06-17T02:46:39Z
dc.date.issued2003-08-04
dc.identifier.citationLiu, W., Chua, S.J., Zhang, X.H., Zhang, J. (2003-08-04). Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions. Applied Physics Letters 83 (5) : 914-916. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1597990
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55746
dc.description.abstractThe effect of postgrowth high temperature treatment of InGaN/GaN multiple quantum wells (MQW) was studied. Photoluminescence (PL) measurements on these samples showed extra peaks in the spectrum beside the green emission due to reactor temperature ramping up to 1000°C after the MQWs growth. The PL spectra show that these extra emission peaks originate due to the occurrence of In segregation in the upper part of the quantum wells.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1597990
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1597990
dc.description.sourcetitleApplied Physics Letters
dc.description.volume83
dc.description.issue5
dc.description.page914-916
dc.description.codenAPPLA
dc.identifier.isiut000184474000034
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.