Please use this identifier to cite or link to this item:
https://doi.org/10.1116/1.1362679
| DC Field | Value | |
|---|---|---|
| dc.title | Diffusion and oxidation of plasma-enhanced chemical-vapor-deposition silicon nitride and underlying metals | |
| dc.contributor.author | Han, G.C. | |
| dc.contributor.author | Luo, P. | |
| dc.contributor.author | Li, K.B. | |
| dc.contributor.author | Wu, Y.H. | |
| dc.date.accessioned | 2014-06-17T02:45:24Z | |
| dc.date.available | 2014-06-17T02:45:24Z | |
| dc.date.issued | 2001-05 | |
| dc.identifier.citation | Han, G.C., Luo, P., Li, K.B., Wu, Y.H. (2001-05). Diffusion and oxidation of plasma-enhanced chemical-vapor-deposition silicon nitride and underlying metals. Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films 19 (3) : 793-797. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1362679 | |
| dc.identifier.issn | 07342101 | |
| dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/55637 | |
| dc.description.abstract | Silicon nitride was grown by plasma enhanced chemical vapor deposition to find its application in magnetic random access memory. Auger electron spectroscopy measurements were used to study diffusion and oxidation of plasma enhanced chemical vapor deposition nitride and underlying metals. Diffusion of Si into Cu film was detected for high-temperature deposited layers. | |
| dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1362679 | |
| dc.source | Scopus | |
| dc.type | Article | |
| dc.contributor.department | PHYSICS | |
| dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
| dc.description.doi | 10.1116/1.1362679 | |
| dc.description.sourcetitle | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films | |
| dc.description.volume | 19 | |
| dc.description.issue | 3 | |
| dc.description.page | 793-797 | |
| dc.description.coden | JVTAD | |
| dc.identifier.isiut | 000168922300012 | |
| Appears in Collections: | Staff Publications | |
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