Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2008.923710
DC Field | Value | |
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dc.title | Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors | |
dc.contributor.author | Tan, K.-M. | |
dc.contributor.author | Fang, W.-W. | |
dc.contributor.author | Yang, M. | |
dc.contributor.author | Liow, T.-Y. | |
dc.contributor.author | Lee, R.T.-P. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-06-17T02:45:20Z | |
dc.date.available | 2014-06-17T02:45:20Z | |
dc.date.issued | 2008-07 | |
dc.identifier.citation | Tan, K.-M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.-P., Balasubramanian, N., Yeo, Y.-C. (2008-07). Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors. IEEE Electron Device Letters 29 (7) : 750-752. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.923710 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/55632 | |
dc.description.abstract | We report the first demonstration of a p-channel multiple-gate (trigate) FinFET with a liner stressor comprising diamond-like carbon (DLC) film. We also report on the detailed process that enables the adhesion of DLC with ultrahigh compressive stress on the three-dimension topology of the FinFET structure. The intrinsic compressive stress for the DLC film is 6 GPa, the highest ever reported for a liner stressor formed over a multiple-gate device structure or FinFET. A high stress-thickness product was successfully realized without film delamination. This leads to a very significant drive current boost for the FinFET with DLC liner stressor as compared to a control FinFET without the DLC liner. © 2008 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.923710 | |
dc.source | Scopus | |
dc.subject | Contact etch stop layer (CESL) | |
dc.subject | Diamond-like carbon (DLC) | |
dc.subject | FinFET | |
dc.subject | Multiple-gate | |
dc.subject | Strain | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2008.923710 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 29 | |
dc.description.issue | 7 | |
dc.description.page | 750-752 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000257626000030 | |
Appears in Collections: | Staff Publications |
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