Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2842404
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dc.titleCorrelation of structural and magnetic properties of ferromagnetic Mn-implanted Si1-x Gex films
dc.contributor.authorKo, V.
dc.contributor.authorTeo, K.L.
dc.contributor.authorLiew, T.
dc.contributor.authorChong, T.C.
dc.contributor.authorLiu, T.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorDu, A.Y.
dc.contributor.authorStoffel, M.
dc.contributor.authorSchmidt, O.G.
dc.date.accessioned2014-06-17T02:43:19Z
dc.date.available2014-06-17T02:43:19Z
dc.date.issued2008
dc.identifier.citationKo, V., Teo, K.L., Liew, T., Chong, T.C., Liu, T., Wee, A.T.S., Du, A.Y., Stoffel, M., Schmidt, O.G. (2008). Correlation of structural and magnetic properties of ferromagnetic Mn-implanted Si1-x Gex films. Journal of Applied Physics 103 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2842404
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55457
dc.description.abstractWe present a comprehensive study relating the magnetic properties to structural properties of Mn+ -implanted Si1-x Gex films as a function of Ge content (x=0-0.5). Ferromagnetic ordering with three critical temperatures, TB ∼10-16 K, TC1 ∼650-780 K, and TC2 ∼825-860 K, are reported in this material system. Element specific x-ray absorption fine structure results show that the majority of the Mn ions are nonsubstitutional in all samples. The transmission-electron microscopy coupled with z contrast and chemical analysis reveals the presence of Mn-rich nanosized clusters including Mn4 Si7 in Si-rich samples and Mn7 Ge3 phases in Ge-rich samples. A composition transition occurred at x∼0.2-0.3, where we observe a change in bond lengths and defect structures. Additionally, an enhancement in magnetizations with an increase in both TB and TC1 as well as a conversion from n -type to p -type conduction are also detected. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2842404
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentSINGAPORE SYNCHROTRON LIGHT SOURCE
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.2842404
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume103
dc.description.issue5
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000254025000062
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