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Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1644114
DC FieldValue
dc.titleCharacterization of graded InGaN/GaN epilayers grown on sapphire
dc.contributor.authorSong, T.L.
dc.contributor.authorChua, S.J.
dc.contributor.authorFitzgerald, E.A.
dc.contributor.authorChen, P.
dc.contributor.authorTripathy, S.
dc.date.accessioned2014-06-17T02:41:12Z
dc.date.available2014-06-17T02:41:12Z
dc.date.issued2004-03
dc.identifier.citationSong, T.L., Chua, S.J., Fitzgerald, E.A., Chen, P., Tripathy, S. (2004-03). Characterization of graded InGaN/GaN epilayers grown on sapphire. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (2) : 287-292. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1644114
dc.identifier.issn07342101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55274
dc.description.abstractThe graded InGaN/GaN epilayers grown on sapphire were studied. The characterization of the InGaN/Gan epilayers were done using atomic force microscopy, scanning electron microscopy, micro-Raman spectroscopy and photoluminescence techniques. The influence of graded InGaN on the strain and the shift of the photoluminescence (PL) spectra was also studied. It was found that the compressive strain was much lower compared to the conventional two-step GaN layer grown at high temperature on sapphire substrate.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1116/1.1644114
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1116/1.1644114
dc.description.sourcetitleJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
dc.description.volume22
dc.description.issue2
dc.description.page287-292
dc.description.codenJVTAD
dc.identifier.isiut000220189800010
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