Please use this identifier to cite or link to this item: https://doi.org/10.1109/LPT.2004.841031
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dc.titleAu-ITO anode for efficient polymer light-emitting device operation
dc.contributor.authorKe, L.
dc.contributor.authorKumar, R.S.
dc.contributor.authorChen, P.
dc.contributor.authorShen, L.
dc.contributor.authorChua, S.-J.
dc.contributor.authorBurden, A.P.
dc.date.accessioned2014-06-17T02:39:54Z
dc.date.available2014-06-17T02:39:54Z
dc.date.issued2005-03
dc.identifier.citationKe, L., Kumar, R.S., Chen, P., Shen, L., Chua, S.-J., Burden, A.P. (2005-03). Au-ITO anode for efficient polymer light-emitting device operation. IEEE Photonics Technology Letters 17 (3) : 543-545. ScholarBank@NUS Repository. https://doi.org/10.1109/LPT.2004.841031
dc.identifier.issn10411135
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55163
dc.description.abstractA thick gold layer is deposited on indium tin oxide (ITO) to improve the interface quality between the ITO anode and the organic layer in organic light-emitting diodes. With this improvement, the device with structure ITO/Au/hole-transport-layer(HTL)/poly(p-phenylenevinylene)/Ca/Ag, achieved a lower turn-on voltage from 4 V to about 1.6 V and an increase in luminescence intensity by more than a factor of two at the same voltage. The work function of the Au facilitates the formation of an ohmic contact and good mechanical adhesion to the HTL. The experimental results suggest that the ITO contact limits the supply of current for radiative recombination. The improvement of the device performance is due to the smoother Au surface and the matching of the Au work function with the highest occupied molecular orbital level of adjacent HTL layer. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LPT.2004.841031
dc.sourceScopus
dc.subjectAnodes
dc.subjectCathodes
dc.subjectCurrent density
dc.subjectIndium compounds
dc.subjectLight-emitting diode displays
dc.subjectPolymers
dc.subjectVoltage measurement
dc.subjectWork function
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LPT.2004.841031
dc.description.sourcetitleIEEE Photonics Technology Letters
dc.description.volume17
dc.description.issue3
dc.description.page543-545
dc.description.codenIPTLE
dc.identifier.isiut000227138400009
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