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Please use this identifier to cite or link to this item: https://doi.org/10.1109/TMTT.2008.2011210
DC FieldValue
dc.titleAnalytical extraction of extrinsic and intrinsic FET parameters
dc.contributor.authorOoi, B.L.
dc.contributor.authorZhong, Z.
dc.contributor.authorLeong, M.-S.
dc.date.accessioned2014-06-17T02:39:14Z
dc.date.available2014-06-17T02:39:14Z
dc.date.issued2009-02
dc.identifier.citationOoi, B.L., Zhong, Z., Leong, M.-S. (2009-02). Analytical extraction of extrinsic and intrinsic FET parameters. IEEE Transactions on Microwave Theory and Techniques 57 (2) : 254-261. ScholarBank@NUS Repository. https://doi.org/10.1109/TMTT.2008.2011210
dc.identifier.issn00189480
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/55105
dc.description.abstractThe least squares solution for the entire small-signal equivalent circuit is itself a formidable task. In this paper, a systematic approach comprising the total and conventional least squares method in analytically obtaining the small-signal field-effect transistor (FET) parameters values is introduced. The proposed method eliminates the conventional cold FET and hot FET modeling constraints and allows an ease in inline process tracking. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMTT.2008.2011210
dc.sourceScopus
dc.subjectField-effect transistor (FET)
dc.subjectSmall-signal equivalent circuit
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TMTT.2008.2011210
dc.description.sourcetitleIEEE Transactions on Microwave Theory and Techniques
dc.description.volume57
dc.description.issue2
dc.description.page254-261
dc.description.codenIETMA
dc.identifier.isiut000263479900002
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