Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2004.05.120
DC FieldValue
dc.titleA FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance
dc.contributor.authorJagar, S.
dc.contributor.authorSingh, N.
dc.contributor.authorMehta, S.S.
dc.contributor.authorAgrawal, N.
dc.contributor.authorSamudra, G.
dc.contributor.authorBalasubramanian, N.
dc.date.accessioned2014-06-16T09:28:00Z
dc.date.available2014-06-16T09:28:00Z
dc.date.issued2004-09
dc.identifier.citationJagar, S., Singh, N., Mehta, S.S., Agrawal, N., Samudra, G., Balasubramanian, N. (2004-09). A FinFET and Tri-gate MOSFET's channel structure patterning and its influence on the device performance. Thin Solid Films 462-463 (SPEC. ISS.) : 1-5. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.120
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/54148
dc.description.abstractA simple and manufacturing worthy method to pattern a very thin channel body of the FinFET/Tri-gate MOSFET is presented. A channel body as thin as 40 nm using the phase-shift mask (PSM) technique with deep UV 248 nm lithography on UV 210 Shipley resist has been achieved, while having an inherently wider Source/Drain (S/D) extension region. The width of extension region was optimized using the Prolitho.3D lithography simulator for the exposure dose and reticle bias conditions. The device simulation of the wider S/D extension region performed using three-dimensional (3-D) Davinci device simulator shows the significant reduction in the S/D parasitic resistance. Furthermore, these patterns on photoresists like UV 210 provides the basis for the easy integration to the mainstream CMOS technology, hence the potential for manufacturability with higher device performance. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2004.05.120
dc.sourceScopus
dc.subjectDUV 248 nm lithography
dc.subjectFin patterning
dc.subjectFinFET
dc.subjectPSM
dc.subjectTri-gate MOSFET
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2004.05.120
dc.description.sourcetitleThin Solid Films
dc.description.volume462-463
dc.description.issueSPEC. ISS.
dc.description.page1-5
dc.description.codenTHSFA
dc.identifier.isiut000223812800002
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