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Please use this identifier to cite or link to this item: https://doi.org/10.1016/0038-1101(94)90096-5
DC FieldValue
dc.titleA direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan
dc.contributor.authorOng, V.K.S.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorChan, D.S.H.
dc.date.accessioned2014-06-16T09:26:33Z
dc.date.available2014-06-16T09:26:33Z
dc.date.issued1994
dc.identifier.citationOng, V.K.S., Phang, J.C.H., Chan, D.S.H. (1994). A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scan. Solid-State Electronics 37 (1) : 1-7. ScholarBank@NUS Repository. https://doi.org/10.1016/0038-1101(94)90096-5
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/54071
dc.description.abstractA new method is proposed for the determination of bulk minority carrier diffusion length and surface recombination velocity. This method uses data from an EBIC line scan in which the current collecting p -n junction or Schottky barrier is parallel to the electron beam. A 3-D computer simulation was used to verify the accuracy of the method. It was found that this method is simpler to use and more accurate than existing methods.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/0038-1101(94)90096-5
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.doi10.1016/0038-1101(94)90096-5
dc.description.sourcetitleSolid-State Electronics
dc.description.volume37
dc.description.issue1
dc.description.page1-7
dc.description.codenSSELA
dc.identifier.isiutA1994MQ09900001
Appears in Collections:Staff Publications

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