Please use this identifier to cite or link to this item: https://doi.org/10.1049/el:20072054
DC FieldValue
dc.title0.18m CMOS dual-band UWB LNA with interference rejection
dc.contributor.authorGao, Y.
dc.contributor.authorZheng, Y.J.
dc.contributor.authorOoi, B.L.
dc.date.accessioned2014-06-16T09:22:32Z
dc.date.available2014-06-16T09:22:32Z
dc.date.issued2007
dc.identifier.citationGao, Y., Zheng, Y.J., Ooi, B.L. (2007). 0.18m CMOS dual-band UWB LNA with interference rejection. Electronics Letters 43 (20) : 1096-1098. ScholarBank@NUS Repository. https://doi.org/10.1049/el:20072054
dc.identifier.issn00135194
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/53840
dc.description.abstractA CMOS dual-band ultra-wideband low noise amplifier (LNA) with interference rejection is presented. The proposed LNA employs a current reuse structure to reduce power consumption and an active notch filter to produce in-band rejection in the 5GHz WLAN frequency band. The load tank of the current reuse stage is optimised to provide an additional out-band attenuation in the 2.4GHz WLAN band. Measurement shows a peak gain of 19.7dB in the low band (3-5GHz) and 20.3dB in the high band (6-10GHz), while the in-band and out-band maximum rejections are 19.6 and 12.8dB, respectively. © The Institution of Engineering and Technology 2007.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1049/el:20072054
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1049/el:20072054
dc.description.sourcetitleElectronics Letters
dc.description.volume43
dc.description.issue20
dc.description.page1096-1098
dc.description.codenELLEA
dc.identifier.isiut000250862400025
dc.published.statePublished
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