Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1632999
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dc.titleNondestructive microwave permittivity characterization of ferroelectric thin film using microstrip dual resonator
dc.contributor.authorTan, C.Y.
dc.contributor.authorChen, L.
dc.contributor.authorChong, K.B.
dc.contributor.authorOng, C.K.
dc.date.accessioned2014-05-19T02:53:43Z
dc.date.available2014-05-19T02:53:43Z
dc.date.issued2004-01
dc.identifier.citationTan, C.Y., Chen, L., Chong, K.B., Ong, C.K. (2004-01). Nondestructive microwave permittivity characterization of ferroelectric thin film using microstrip dual resonator. Review of Scientific Instruments 75 (1) : 136-140. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1632999
dc.identifier.issn00346748
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/53060
dc.description.abstractThe use of a microstrip dual resonator for nondestructive permittivity characterization of a ferroelectric thin film at microwave frequencies was described. The temperature dependence of a ferroelectric thin film was also studied using the hermetic test fixture. The dielectric constant and loss tangent of the ferroelectric thin films were derived from the resonant frequencies and quality factors of the dual-resonator structure. It was found that the Curie temperature of the thin film is about 0°C.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1632999
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentTEMASEK LABORATORIES
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.description.doi10.1063/1.1632999
dc.description.sourcetitleReview of Scientific Instruments
dc.description.volume75
dc.description.issue1
dc.description.page136-140
dc.description.codenRSINA
dc.identifier.isiut000187536500021
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