Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp311092s
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dc.titleBand gap tunable N-type molecules for organic field effect transistors
dc.contributor.authorGlowatzki, H.
dc.contributor.authorSonar, P.
dc.contributor.authorSingh, S.P.
dc.contributor.authorMak, A.M.
dc.contributor.authorSullivan, M.B.
dc.contributor.authorChen, W.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorDodabalapur, A.
dc.date.accessioned2014-05-19T02:50:19Z
dc.date.available2014-05-19T02:50:19Z
dc.date.issued2013
dc.identifier.citationGlowatzki, H., Sonar, P., Singh, S.P., Mak, A.M., Sullivan, M.B., Chen, W., Wee, A.T.S., Dodabalapur, A. (2013). Band gap tunable N-type molecules for organic field effect transistors. Journal of Physical Chemistry C 117 (22) : 11530-11539. ScholarBank@NUS Repository. https://doi.org/10.1021/jp311092s
dc.identifier.issn19327447
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/52806
dc.description.abstractA series of four novel n-type molecules has been synthesized. Unlike previous approaches, the end group of these molecules was fixed and the molecular core was varied. The resulting materials were thoroughly analyzed. Electronic properties were derived from photoemission spectroscopy, optical properties were derived with the help of optical spectroscopy, and the structure of thin films on Au(111) was derived by scanning tunneling microscopy (STM). In addition, prototypical organic field-effect transistors (OFETs) (forming n-channels in OFETs) have been fabricated and tested. The correlation between the device performance of the respective OFETs (i.e., electron mobility) and their electronic as well as structural properties was investigated. It turned out that a combination of beneficial electronic and structural properties provides the best results. These findings are important for the design of new materials for future device applications. © 2013 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/jp311092s
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentPHYSICS
dc.description.doi10.1021/jp311092s
dc.description.sourcetitleJournal of Physical Chemistry C
dc.description.volume117
dc.description.issue22
dc.description.page11530-11539
dc.identifier.isiut000320214800010
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