Please use this identifier to cite or link to this item: https://doi.org/10.1007/s12034-006-0006-1
DC FieldValue
dc.titleHigh coercivity in nanostructured Co-ferrite thin films
dc.contributor.authorYin, J.H.
dc.contributor.authorLiu, B.H.
dc.contributor.authorDing, J.
dc.contributor.authorWang, Y.C.
dc.date.accessioned2014-05-16T07:03:07Z
dc.date.available2014-05-16T07:03:07Z
dc.date.issued2006-11
dc.identifier.citationYin, J.H., Liu, B.H., Ding, J., Wang, Y.C. (2006-11). High coercivity in nanostructured Co-ferrite thin films. Bulletin of Materials Science 29 (6) : 573-580. ScholarBank@NUS Repository. https://doi.org/10.1007/s12034-006-0006-1
dc.identifier.issn02504707
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/52638
dc.description.abstractThree methods including sol-gel, rf sputtering and pulsed laser deposition (PLD) have been used for the fabrication of high coercivity Co-ferrite thin films with a nanocrystalline structure. The PLD method is demonstrated to be a possible tool to achieve Co-ferrite films with high coercivity and small grain size at low deposition temperature. High coercivity, over 10 kOe, has been successfully achieved in Co-ferrite films with a thickness of ∼ 100 nm deposited using PLD with a substrate temperature at 550°C. The Co-ferrite films prepared by PLD at over 300°C on different substrates including amorphous glass, quartz and silicon exhibits an obvious (111) textured structure and possesses perpendicular anisotropy. Our study has also shown that the high coercivity is related with a large residual strain, which may induce an additional magnetic anisotropy (stress anisotropy) and at the same time serve as pinning centres, which can restrict the domain wall movement and therefore, increase the coercivity. © Indian Academy of Sciences.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s12034-006-0006-1
dc.sourceScopus
dc.subjectCo-ferrite films
dc.subjectHigh coercivity
dc.subjectNanostructured
dc.typeConference Paper
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1007/s12034-006-0006-1
dc.description.sourcetitleBulletin of Materials Science
dc.description.volume29
dc.description.issue6
dc.description.page573-580
dc.description.codenBUMSD
dc.identifier.isiut000243115300006
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